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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1846 DESCRIPTION *With TO-3PFa package *High voltage,high speed *Built-in damper diode *Wide area of safe operation APPLICATIONS *Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Max.operating junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 3.5 10 1.5 3 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA ;IC=0 IC=3A; IB=0.8A IC=3A; IB=0.8A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT VF DC current gain DC current gain Transition frequency Diode forward voltage IC=0.5A ; VCE=5V IC=3A ; VCE=10V IC=0.5A ; VCE=10V;f=0.5MHz IC=3.5A 5 4 MIN 7 2SD1846 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 8.0 1.5 10 1.0 25 V V A mA 2 2.0 MHz V Switching times resistive load ts tf Storage time IC=3A; IB1=0.8A; IB2=-1.6A VCC=200V Fall time 0.2 s 1.5 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1846 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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